Autumn 2010 (99-1
學期)
Department of Computer Science & Engineering
Yuan Ze University
Instructor
Textbook
References
Grading Policy
Teaching Assistant
Venue
Timetable (subject to change)
Week |
Date (2010-2011) |
Topics |
Reading | Lab | Homework |
1 | 9/09 (Thu.) |
Ch01: Introduction, MOS Transistors, and CMOS Logic | 1.1 ~ 1.3 | ||
2 | 9/16 (Thu.) |
Ch01: MOS Transistors, and CMOS Logic | 1.3 ~ 1.4 |
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3 | 9/23 (Thu.) |
Ch01: CMOS Logic, CMOS Fabrication and Layout | 1.4 ~ 1.5, 3.1 ~ 3.2 |
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4 | 9/30 (Thu.) |
Ch01: CMOS Fabrication and Layout Ch03: CMOS Processing Technology |
1.5, 3.1 ~ 3.2 |
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5 | 10/07 (Thu.) |
Quiz-01 Ch01: CMOS Fabrication and Layout (incl. Fabrication Process) Ch03: CMOS Processing Technology |
1.5, 3.2 |
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6 | 10/14 (Thu.) |
Ch03: CMOS Processing Technology (incl. Design Rules) Ch01: CMOS Fabrication and Layout (incl. Design Rules, Stick Diagrams, Area Estimation) |
3.3, 1.5 |
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7 | 10/21 (Thu.) |
Ch03: CMOS Processing Technology (incl. Design Rules
Checking, Circuit Extraction) Ch01: CMOS Fabrication and Layout (incl. Design Flow, Logic Design, Circuit Design, Physical Design, Design Verification) |
3.3, 3.5, 1.8 ~ 1.12 |
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8 | 10/28 (Thu.) |
Ch03: CMOS Processing Technology (incl. CMOS Process
Enhancements, Manufacturing Issues) Ch02: MOS Transistor Theory (incl. Ideal I-V Characteristics) |
3.4, 3.6, 2.1 ~ 2.2 |
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9 | 11/04 (Thu.) |
Midterm Exam (Intro. to VLSI Design) Exam Date and Time: November 4 (Thursday) 18:30 - 21:20 Location: Classroom 1102 Coverage: The midterm exam will cover Chapter 1 and Chapter 3 of the textbook. Note: Please bring your student ID. Please turn off your mobile phone while taking the exam. Please do not take/use any calculators, dictionaries, electronic dictionaries, books, notebooks, or pieces of papers while taking the exam. Note: After taking the exam, please leave the classroom and do not wander or talk near the classroom. 注意: 必須攜帶學生證應考,考試時手機請關機,不得攜帶計算機、字典、電子字典、任何書籍或紙張。 注意: 完成考試的同學請盡速離開考場,並且勿在考場附近逗留或大聲喧嘩。影響他人考試者將扣期中考分數或平時分數。 (The week for midterm exams: 11/04~11/10) |
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10 | 11/11 (Thu.) |
Ch02: MOS Transistor Theory (incl. Ideal I-V Characteristics) | 2.2 |
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11 | 11/18 (Thu.) |
Ch02: MOS Transistor Theory (incl. C-V Characteristics, Nonideal I-V Effects) | 2.3 ~ 2.4 |
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12 | 11/25 (Thu.) |
Exam for Lab Exercises (上機考) |
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13 | 12/2 (Thu.) |
Ch02: MOS Transistor Theory (incl. DC Transfer Characteristics, Pass Transistor DC Characteristics) | 2.5 |
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14 | 12/9 (Thu.) |
Ch02: MOS Transistor Theory (incl. Pass Transistor DC
Characteristics, Switch-level RC Delay Models) |
2.5 ~ 2.7 |
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12/10 (Fri.) |
Additional/Make-up Lecture Ch05: Circuit Simulation |
5.1 ~ 5.2 | |||
15 | 12/16 (Thu.) |
Ch05: Circuit Simulation (incl. Device Models, Design
Corners) Ch11: Array Subsystems |
5.2 ~ 5.3, 11.1 |
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12/17 (Fri.) |
Additional/Make-up Lecture Ch11: Array Subsystems (incl. SRAM Cells, Read and Write Operations of SRAM Cells) |
11.1 ~ 11.2 | |||
16 | 12/23 (Thu.) |
Ch11: Array Subsystems (incl. DRAM Cells) Ch04: Circuit Characterization and Performance Estimation (incl. Delay Estimation, Elmore Delay Model) |
11.3, 4.1 ~ 4.2 |
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17 | 12/30 (Thu.) |
Ch04: Circuit Characterization and Performance
Estimation (incl. Power Dissipation) Ch06: Ratioed Circuits |
4.4, 6.2 |
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18 | 1/06 (Thu.) |
Final Exam (Intro. to VLSI Design) Exam Date and Time: January 6 (Thursday) 18:30 - 21:20 Location: Classroom 1102 Coverage: The exam will cover Chapters 1, 2, 3, 4, 5, 6, and 11. Note: Please bring your student ID. Please turn off your mobile phone while taking the exam. Please do not take/use any calculators, dictionaries, electronic dictionaries, books, notebooks, or pieces of papers while taking the exam. Note: After taking the exam, please leave the classroom and do not wander or talk near the classroom. 注意: 必須攜帶學生證應考,考試時手機請關機,不得攜帶計算機、字典、電子字典、任何書籍或紙張。 注意: 完成考試的同學請盡速離開考場,並且勿在考場附近逗留或大聲喧嘩。影響他人考試者將扣期中考分數或平時分數。 (The week for final exams: 1/06~1/12) |
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19 | 1/13 (Thu.) |
last update: January 04, 2011